Abstract
The effect of hydrogen on Pt/GaN Schottky diodes was studied using current–voltage (I–V), capacitance–voltage (C–V), and impedance spectroscopy measurements. The results showed that hydrogen exposure reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region. Exposure to dry air restored the I–V curves, 1/C2–V curves, and Nyquist plots to the original values more rapidly than exposure to pure N2, suggesting that Pt functioned as a catalyst. Hydrogen-induced changes in the properties of the Pt/GaN interface oxide may be related to these phenomena.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
