Abstract
Silicon dioxide and silicon nitride films with various contents of SiH and NH bonds and OH groups have been studied. By registering the hot electron flow from the free surface on the dielectric under study the effect of hydrogen on the electron cooling has been investigated. It has been established that the main factor responsible for the scattering of electron energy is the presence of any form of hydrogen in the films. The cooling length of electrons whose energy is 2–4 eV in low temperature SiO 2 and Si 3N 4 films ( T synth ≈ 200°C) has been found to be 1–3 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
