Abstract
Epitaxial growth of graphene on silicon carbide (SiC) facilitates the direct application of graphene in the semiconductor field. During the graphene preparation process, hydrogen plays a crucial role in determining its morphology. Therefore, studying the influence of hydrogen on the graphene morphology on the SiC surface is of great significance. In this study, we present a direct epitaxial growth of graphene on the SiC(0001) surface under atmospheric pressure. Our focus extends beyond the growth process itself to investigate the important role of hydrogen in shaping the quality and morphology of both the substrate and the graphene. By showing the influence of hydrogen at various stages, our research aims to contribute insights that advance the seamless integration of graphene into the semiconductor field.
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