Abstract
The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in decreased carbon incorporation in Ga-sites. Furthermore, the GaN layer had a smooth surface with Ga polarity, whereas the layer grown without hydrogen addition showed a facetted surface with N polarity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
