Abstract
We have studied the effect of HBr concentration in (H2O2–HBr–EG)/EG etching mixtures on chemical–mechanical polishing (CMP) and dynamic chemical polishing (DCP) of single-crystal PbTe and Pb1 –xSnxTe solid solutions. The CMP and DCP rates have been measured as functions of solution composition, and the effect of initial HBr concentration on the composition range of polishing etchants, surface quality, and surface condition after polishing has been assessed by measuring surface roughness. We have optimized the composition of polishing mixtures and processing conditions for obtaining high-quality polished surfaces.
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