Abstract
Ferroelectric Thin Film-Based Memories In article number 2100650, Gustau Catalan, Neus Domingo, and co-workers demonstrate that the maximum speed at which ferroelectric thin film-based memories can be written accelerates with atmospheric humidity – and, conversely, slows down in dry conditions. The domain width as a function of relative humidity follows the behavior of the water adsorption isotherm, revealing the interplay between water layer thickness and screening. Image by Damaso Torres, ICN2.
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