Abstract
The effect of deposition temperature, relative humidity of carrier gas and UV-assistance on the growth of Erbium-doped aluminium oxide films has been studied. The films were prepared from aluminium acetylacetonate (Al(C5H7O2)3) and erbium (III) Tris(2,2,6,6-tetramethyl-3,5-heptanedionate) (Er(TMHD)3) by UV and aerosol-assisted metal–organic chemical vapour deposition, using air with controlled humidity as carrier gas. Amorphous transparent films were deposited between 350 and 460°C. It was observed that UV assistance allows a large decrease down to 5kJ/mol of the activation energy of the deposition reaction for deposition temperatures lower than 420°C. More over, depositing under high air humidity induced higher deposition rate, lower level of organic contamination and higher film density. Under these conditions Er-doped aluminium oxide films with a refractive index value of 1.71 were obtained at 460°C.
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