Effect of Hot Zone Design on Polycrystalline Silicon Ingot Growth Process by Seeded Directional Solidification

Abstract

This paper uses the finite element method for numerical simulation and builds a transient global model to simulate polycrystalline silicon ingot growing process in CGsim software. The transient global model is verified through experiments. In addition, the influence of the width and height of the bottom of the side insulation on the temperature field, power consumption and melt-crystal interface (m/c interface) of the solidification process are analyzed. And a new hot zone design method is proposed to protect seed crystal silicon. The results show that the residual height of the seed crystal is increased by 4.5 mm through this design. And increasing the width and height of the side insulation bottom can effectively reduce the power consumption by 5 kW and improve the crystal growth interface, which helps to improve the crystal quality and reduce the cost. This study will provide some references for the optimization of polycrystalline silicon ingot growing process.