Abstract
W-silicide coatings were deposited on tungsten substrate by using hot dip silicon-plating method under various temperatures. The phase composition, microstructure, and concentration distribution of elements were investigated. The results show that the W-silicide coatings consist of WSi2 layer and interface layer (W5Si3 layer), and the WSi2 coatings have a strong preferred orientation on the (211) and (206) crystal faces. The hot dip temperature has a significant effect on thicknesses and grain sizes of coatings. With the increase of hot dip temperature, the thicknesses of WSi2 layer and W5Si3 layer, and grain sizes increase obviously. Moreover, a high silicon concentration is observed at coating surface when the temperature is 1560 °C, and the highest silicon concentration is about 46 wt% (84.79 at.%).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
