Abstract
Defect formation and annealing processes in n-type silicon crystals heat-treated at temperatures from 550 to 1000°C for a short time and then gamma-irradiated in a 60Co source or electron-irradiated (E = 4 MeV) at room temperature have been studied using Hall effect measurements. The results demonstrate that the preheat treatment (PHT) has an insignificant effect on the energy spectrum and generation efficiency of major defect species. At the same time, PHT results in enhanced annealing of radiation-induced defects, accompanied by the formation of additional electrically active centers. PHT is assumed to activate transition-metal impurities (fast diffusers in silicon), which then interact with radiation-induced defects.
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