Abstract
The degradation of deep submicrometer (0.1 /spl mu/m) fully depleted silicon-on-insulator n-MOSFETs subjected to 2-MeV electron irradiation at different temperatures is reported. The radiation-induced damage is investigated by studying the static characteristics of devices with different geometries and bias conditions. The change of the front and back-channel parameters, the impact of the gate coupling effect and the gate-induced floating body effects and the irradiation temperature dependence of these degradations are clarified. It is found that the degradation of the electrical properties tends to be small for high temperature irradiation compared with that for room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
