Abstract
The diffusion of nickel into amorphous Si (a-Si) thin films and the growth of different nickel silicides is reported. a-Si and Ni films were deposited on Borosilicate Glass substrates and annealed in vacuum at temperatures from 200 to 500°C. The average grain size of the films increases from 150 nm to 360 nm with deposition temperature. Cross-sectional scanning electron microscopy and energy dispersive x-ray spectroscopy have been used in conjunction to reveal the process of diffusion. It is inferred from x-ray diffraction and Raman spectroscopy analysis on these stacks that Ni3Si is formed at 200°C, NiSi at 300°C and NiSi2 at 400°C. This study reveals that Ni-Si bilayer films deposited at an elevated temperature and subsequently annealed at the deposition temperature formed monophase Ni silicides.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
