Abstract
Epitaxial growth was carried out to grow Ruthenium (Ru) silicide films. Films were grown on Si (100) substrate utilizing molecular beam epitaxy (MBE) method. Firstly, the low-temperature Si buffer layer was grown at relatively low temperature of 400 °C to accommodate lattice strain and Ru silicides epilayers were grown at 750 °C. Secondly, the effect of high-temperature annealing of 1050 °C on the grown film was depicted. To investigate the surface morphology as well as microstructural characteristics atomic force microscopy (AFM), transmission electron microscopy TEM, and x-ray diffraction (XRD) measurements were employed. Only the peaks of the Ru2Si3 phase were recorded in XRD measurements. X-ray photoelectron spectroscopy (XPS) was used to reveal the chemical and electronic composition of Ru silicide films, and a detectable change in the composition ratio toward the formation of Ru2Si3 was established after annealing. Additionally, Raman spectroscopy was utilized to evaluate the characteristics modes of entity phases.
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