Abstract
A novel structure of AlGaN/GaN heterostructure which has a high temperature AlN interlayer (HT-AlN) in GaN buffer grown by metal organic chemical vapor deposition(MOCVD) on c-plane sapphire substrate has been researched. It is found that both electron mobility and sheet carrier concentration are increased by the HT-AlN interlayer compared to AlGaN/GaN heterostructure without HT-AlN interlayer. The sheet carrier concentration and Hall mobility measured by Hall increased from 1.446×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> and 1019 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /v·s to 1.605×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> and 1036 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /v·s, respectively, hence the sheet resistance decreased from 424Ω/□ to 376Ω/□.
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