Abstract
Melt flow structure during the silicon single crystal growth process strongly affects the crystal quality. Therefore, melt convection control technique should be developed to obtain the high quality single crystal. For this purpose, we proposed a high frequency magnetic field applied method, and numerically investigated the effect of high frequency magnetic field on Czochralski (CZ) silicon melt convection. The results revealed that the melt convection was strongly affected by the applied electric current and frequency. The temperature distribution just below the crystal became flat if the applied electric current and frequency were selected as optimized value.
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