Effect of High-Energy Proton Irradiation on DC Characteristics and Current Collapse in MgO and Sc[sub 2]O[sub 3] Passivated AlGaN/GaN HEMTs

Abstract

MgO or Sc 2 O 3 passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons at a dose equivalent to ∼10 years in low-earth orbit. Very little change in drain-source current, transconductance, or diode ideality factor was observed under these conditions, but the reverse breakdown increased due to a decrease in channel electron density. In addition, no significant change was observed in the drain-source current under pulsed conditions, indicating that the proton irradiation did not alter the effectiveness of the MgO and Sc 2 O 3 in passivating surface states.