Abstract
The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5K in pseudo-spin-valve (PSV) CoFeB∕MgO∕CoFeB magnetic tunnel junctions (MTJs) annealed at 450°C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450°C. Energy dispersive x-ray analysis shows that annealing at 450°C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed.
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