Abstract
Ballistic transport in double-barriers resonant tunneling diodes based on GaN is investigated in this work using the non-equilibrium Green's functions formalism. The electron density of states, the electrons concentration, and the current-voltage characteristics are calculated taking into account the internal electric field induced in the AlxGa1−xN/GaN heterostructures. The effect of the geometrical parameters on the evolution of the current resonances characteristics was analyzed qualitatively by varying GaN quantum well width, thicknesses and height of the AlxGa1−xN barriers.
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