Abstract
Crystal defects in Ga‐doped SnO2 grown on SnO2 buffer layers on r‐plane sapphire by plasma‐assisted molecular beam epitaxy have been analysed by transmission electron microscopy (TEM). The (101)‐oriented epitaxial SnO2 buffer layers contain a high number of crystallographic shear plane (CSP) defects (∼1011 cm−2) and threading dislocations (TDs, ∼1010 cm−2). However, their density reduces with increasing layer thickness. Whereas a Ga atomic concentration of 3.2 × 1016 cm−3 does not lead to any change in the defect structure of the SnO2 layers, heavily doped SnO2 layers ([Ga] ∼ 6.1 × 1020 cm−3) contain a continuous network of coherent Ga‐rich precipitates appearing as platelets in crystallographically equivalent SnO2(100) and SnO2(010) planes. Electron conduction through this network might explain the reduced electrical resistivity compared to semi‐insulating SnO2 with lower Ga concentration
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