Abstract
Band gap narrowing in heavily doped p-type GaAs is estimated by photoluminescence measurement. Measured values agree well with the theoretical results. Monte Carlo simulation of minority electron transport demonstrates that plasmon scattering plays an essential role in heavily doped p-type GaAs. Theoretical calculations, including these heavy doping effects, on heterojunction bipolar transistors (HBT's) show that maximum oscillatiorn frequency of over 300 GHz is expected by increasing the hole concentration of the base layer to 1×1021 cm-3.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
