Abstract
Thin films of fluorine-doped tin dioxide (SnO2:F) were deposited by a spray pyrolysis technique on soda lime glass substrates. Structural and electronic transport properties of the films deposited with different doping levels of fluorine (zero to 350 at %) were investigated. X-ray diffraction technique and Hall effect measurements were used for this work. Growth rate of the films was considerably affected by doping, specially at higher doping levels. The films were polycrystalline and preferentially oriented along [200]. This preferred growth played a dominant role in determining the transport properties. Notably the charge carrier mobility was directly governed by this preferred growth. The electrical conductivity was totally governed by the carrier concentration. The respective changes in carrier concentration were used to suggest the site selection of the fluorine dopant in the SnO2 lattice.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
