Abstract
Oxide precipitate growth in boron‐doped Czochralski silicon wafers with resistivities ranging from 6 to 40 mΩ cm has been studied following prolonged annealing from 800 to 1000°C. Transmission electron microscopy revealed that (i) the growth rate of oxide platelet precipitates is proportional to the square root of time in 40 mΩ cm samples and (ii) the precipitate morphology changes from plate to polyhedral and strain around the precipitate decreases during annealing at 900°C in 6, 9, and 18 mΩ cm samples. These results indicate that changes in precipitate morphology occur because the oxygen precipitation and boron atom size effects are enhanced by increasing boron concentration. © 1999 The Electrochemical Society. All rights reserved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
