Abstract
Experimental investigations on the effect of the heat-sink temperature on the frequency of oscillation of an X-band Si (p+nn+) IMPATT diode have been made. The IMPATT diode is mounted in a waveguide cavity and the heat sink is provided by a copper screw whose temperature is adjusted to different values. The mechanical tuning is done by a shorting plunger while the electronic tuning is provided by the dc bias current. It is found that the electronic tuning characteristic is shifted towards the lower frequency region with the increase of the heat-sink temperature. The threshold bias current has also been observed to increase with the increase of the temperature of the heat sink. A theoretical treatment of the temperature dependence of the microwave properties of avalanche diodes has been carried out which is in qualitative agreement with the experimental results.
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