Abstract
Non-stoichiometric p-type NiO thin films were deposited by radio frequency reactive magnetron sputtering from a Ni target with equal Ar and O 2 flow rates. The non-stoichiometry of as-deposited NiO presented an O-rich NiO phase analyzed by Rutherford backscattering spectrometry. The properties of sputtered NiO films, such as crystallinity, transmittance, bonding configuration, and hole carrier concentration after annealing at various temperatures in nitrogen were examined using X-ray diffractometry, ultraviolet-visible spectroscopy, X-ray photoelectron spectrometry and Hall measurement, respectively. Furthermore, the weight change and phase transition of sputtered NiO heated in nitrogen ambient were measured by thermogravimetric analysis and differential scanning calorimetry. Our results reveal that the heat treatment on NiO films leads to the out-diffusion of excess oxygen atoms, which may be attributed to their interstitial nature in the sputtered NiO structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
