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Abstract
Transparent conducting indium tin oxide (ITO) films were deposited onto glass substrates by radio-frequency magnetron sputtering at 648 K, under an oxygen partial pressure of 1 Pa. The effect of annealing on the electrical properties of the films was studied. Characterization of the coatings revealed an electrical resistivity below 6.5 × 10− 3 Ω cm. The ITO films deposited at 648 K were amorphous, while the crystallinity improved after annealing at 700 K. The surface morphology examined by scanning electron microscopy appears to be uniform over the entire surface area after annealing. The NO2-sensing properties of the ITO films were investigated and showed sensitivity at concentrations lower than 50 ppm, at a working temperature of 600 K.
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