Abstract
The effect of thermal anneal on the bulk minority carrier diffusion length, L n , of Edge-defined Film-fed Growth (EFG) ribbon silicon has been investigated. Statistical distributions of L n were gathered after the thermally treated ribbons were fabricated into solar cells by a cold junction formation method (ion implant and pulsed electron beam anneal). The measurements were made by using a bifurcated optical guide arrangement which was specifically designed for ribbon samples with variable surface reflectance. The experimental results indicated that, after a medium temperature (800°C) thermal anneal in a neutral ambient, the form of the L n distribution changed in an overall degradation in the average value. With the same thermal anneal in a gettering ambient, the distribution also altered, but with an overall improvement. The observations will be discussed in terms of the interaction of metallic impurities with the local structural and chemical defects contained in the ribbons.
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