Abstract
The effect of heat treatment on the minority-carrier surface recombination velocity in hydrogen-passivated polycrystalline silicon samples has been studied in the temperature range 350–500 °C using the electron-beam-induced current mode of a scanning electron microscope. Minority-carrier trap center densities, calculated from the minority-carrier surface recombination velocity data, varying from 8×1012 to 1.2×1012 cm−2 have been measured. A finite decrease in the minority-carrier trap center density indicates that hydrogen atoms diffuse to the surface from the bulk of the hydrogenated samples. The activation energy of hydrogen diffusion in silicon is found to be 0.53±0.04 eV.
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