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https://doi.org/10.1016/0038-1101(77)90029-6
Copy DOIJournal: Solid State Electronics | Publication Date: Jan 1, 1977 |
Citations: 33 |
Heat treatment of bulk n-InP in a hydrogen stream at a temperature below 500°C is shown to cause significant change in carrier concentration near the surface. The heat treated samples show an electron trap centre with a thermal activation energy of 0.46 eV. The effect of heat treatment of VPE n-InP is seen to be much smaller than that in the bulk material.
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