Abstract

Observation des valeurs du coefficient d'anisotropie M selon differentes temperatures de recuit (750 a 800°C, 1200°C) et avec une contrainte uniaxiale ou non. Comparaison avec les valeurs obtenues pour le silicium dope au phosphore par fusion classique. Interpretation des valeurs de M par la presence d'imperfections du reseau induites par le dopage a l'aide des neutrons

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