Abstract
We report on the effect of 500 keV He[Formula: see text] ion implantation with a fluence of [Formula: see text] ions/cm2 on Rb[Formula: see text]-K[Formula: see text] ion exchanged KTiOPO4 optical waveguide. The refractive index distribution after ion implantation, ion exchange, and ion implantation and subsequent ion exchange were reconstructed by reflectivity calculation method, inverse Wentzel–Kramers–Brillouin, and intensity calculation method, respectively. The near field intensity distribution of the waveguides was simulated by Beam Propagation Method. The phase analysis of the samples was measured by X-ray diffraction technique. The damage layer formed in the depth of maximum nuclear energy deposition by ion implantation acts as a barrier to block the ions diffusion into the sample. Results exhibit that ion implantation and subsequent ion exchange are effective means for optical waveguide formation.
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