Abstract
The method of atomic-force microscopy is used to study the morphology of the surface of porous silicon layers formed on the p-Si substrate and obtained by anodic etching in an electrolyte with addition of free halogens (bromine, iodine) and potassium halogenides (KCl, KI). It is established that the presence of halogens in the electrolyte is conducive to formation of large pores with the diameter as large as 150 nm. The mechanism of an increase in the pore sizes with involvement of halogens is related to an increase in the concentration of free holes due to formation of donor-acceptor pairs in the case of adsorption of halogens on the silicon surface.
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