Effect of Halogen Passivation of a Surface on Radiative and Nonradiative Transitions in Silicon Nanocrystals

Abstract

Within the framework of the density functional theory, the electron structure and the rates of radiative electron–hole transitions and Auger recombination were calculated for silicon nanocrystals, up to 2.5 nm in size, on the surface of which dangling bonds were saturated with chlorine or bromine atoms. Both the radiative and Auger processes were found to be very slow compared with the case of hydrogen cover, which is evidence in favor of the effectiveness of the influence of the “surface chemistry” factor on the electronic and optical properties of nanocrystals.