Abstract
The effects of halogen impurities (Cl, Br, and I) on both the electrical dc resistivity and thermopower and bulk selenium glasses have been investigated. Data show that doped glasses have their electrical resistivity lowered by several orders of magnitude when compared with pure amorphous selenium. The resistivity is governed by trap-limited band conduction and the doped samples are found to be p-type. An interpretation of the results points to the existence of quenched C 2 + acceptor centres which are responsible for an impurity energy level at 0.70 eV above the valence band.
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