Abstract
Abstract The interface, optical and electrical properties of InGaN light emitting diodes (LEDs) with different H2 flow treatment during the barrier growth are investigated in this study. With H2 treatment, the interface between the quantum well and barrier becomes rougher and the photoluminescence intensity decreases. The external quantum efficiency of the LEDs with 600 sccm (2.7%) H2 treatment has the best performance among the samples. Both the forward and reverse leakage currents of the samples are reduced significantly when treated with H2. Among the samples, a H2 flow with 600 sccm (2.7%) gives the best performance.
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