Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Abstract

The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4∶SiH4 ratios as high as 150∶1. With H2 addition and at a CH4∶SiH4 ratio of 100∶1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.