Effect of H[sub 2] Pulse on Pulsed MOCVD of Cu Seed Layers

Abstract

Pulsed metallorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been conducted by an alternating supply of a source and reactant at low deposition temperatures between 50 and 100°C. The growth rate increased proportionally to the number of cycle, ranging from 3.5 to 5.4 Å/cycle, indicating the ability to control the nano-scale thickness. As-deposited films show very smooth surfaces and the low resistivities of 3.3 μΩ cm for 30 nm thick films. About a 90% step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. introduced as a reactant gas, can play an active role in achieving highly conformal coatings, with negligible impurities and excellent adhesion of Cu films to the TiN substrate. © 2004 The Electrochemical Society. All rights reserved.