Abstract
Pulsed metallorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been conducted by an alternating supply of a source and reactant at low deposition temperatures between 50 and 100°C. The growth rate increased proportionally to the number of cycle, ranging from 3.5 to 5.4 Å/cycle, indicating the ability to control the nano-scale thickness. As-deposited films show very smooth surfaces and the low resistivities of 3.3 μΩ cm for 30 nm thick films. About a 90% step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. introduced as a reactant gas, can play an active role in achieving highly conformal coatings, with negligible impurities and excellent adhesion of Cu films to the TiN substrate. © 2004 The Electrochemical Society. All rights reserved.
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