Abstract
CuInS 2 thin films were deposited by chemical spray of aqueous solutions containing CuCl 2, InCl 3 and thiourea at substrate temperature of 250 °C in air and subjected to annealing at 530 °C in H 2S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. As-sprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS 2 films deposited from the solutions with [Cu 2+] / [In 3+] = 1.0 and 1.1, H 2S treatment for 30 min increased the chalcopyrite content up to 73% and 51%, respectively. Cu XS phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H 2S treatment.
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