Abstract
Thin films of Dy were deposited on single crystal substrates of yttria stabilized zirconia, SrTiO3, and vitreous SiO2 by molecular beam epitaxy. The effect of the growth temperature on film composition and characteristics was investigated employing electron spectroscopy for chemical analysis, x-ray diffraction and electrical conductivity probes. For the films deposited on yttria stabilized zirconia and SrTiO3 substrates, a transformation from metallic to oxide was observed at growth temperatures of ∼200 °C. However, in the case of films deposited on SiO2 no such effect up to 500 °C was observed. The results show uptake of oxygen by the film from yttria stabilized zirconia and SrTiO3, implying poor stability of these materials with respect to oxygen at moderately high temperatures under ultrahigh vacuum.
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