Abstract
This investigation deals with the effect of growth temperature on the microstructure, nitrogen content, and crystallinity of C–N nanotubes. The X-ray photoelectron spectroscopic (XPS) study reveals that the atomic percentage of nitrogen content in nanotubes decreases with an increase in growth temperature. Transmission electron microscopic investigations indicate that the bamboo compartment distance increases with an increase in growth temperature. The diameter of the nanotubes also increases with increasing growth temperature. Raman modes sharpen while the normalized intensity of the defect mode decreases almost linearly with increasing growth temperature. These changes are attributed to the reduction of defect concentration due to an increase in crystal planar domain sizes in graphite sheets with increasing temperature. Both XPS and Raman spectral observations indicate that the C–N nanotubes grown at lower temperatures possess higher degree of disorder and higher N incorporation.
Highlights
Hollow and porous structures, such as nanotubes of carbon and other inorganic materials, have emerged as an intriguing class of nanomaterials due to their widespread novel properties and applications [1,2,3,4,5,6,7,8]
This study focuses on the effect of variation of growth temperature on the microstructural features, nitrogen concentration, and the crystallinity of the nanotubes and the inter-relationship of these features
scanning electron microscopic (SEM) exploration revealed the formation of clean, wellaligned C–N nanotube bundles at all the growth temperatures
Summary
Hollow and porous structures, such as nanotubes of carbon and other inorganic materials, have emerged as an intriguing class of nanomaterials due to their widespread novel properties and applications [1,2,3,4,5,6,7,8]. Both XPS and Raman spectral observations indicate that the C–N nanotubes grown at lower temperatures possess higher degree of disorder and higher N incorporation. N. Srivastava Department of Physics, Banaras Hindu University, Varanasi 221005, India
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