Abstract
We report results from investigation of the optical properties of GaNAs∕GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580°C in comparison with a structure grown at 450°C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650°C in the structure grown at 450°C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580°C.
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