Abstract
Effects of growth conditions on Al composition and quality of Al x Ga 1− x N epilayer grown by low-pressure matelorganic vapor phase epitaxy (MOVPE) have been investigated. The dependences of Al composition, growth rate and quality on the NH 3 flow rate, TMAl flow rate and growth temperature were studied. The Al composition and quality of Al x Ga 1− x N film depend not only on the TMAl flow rate, but also on the NH 3 flow rate and on the growth temperature. The Al composition of Al x Ga 1− x N film becomes saturated when the gas-phase composition TMAl/(TMAl + TMGa) increases to 0.4, while quality of Al x Ga 1− x N film becomes much worse. The Al composition of Al x Ga 1− x N film increases with increase in the NH 3 flow rate. The quality of Al x Ga 1− x N epilayer is improved when the growth temperature increases. Possible Al incorporation mechanism is discussed.
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