Abstract
High performance thin film transistors (TFTs) are fabricated on quarts substrate based on zone-melting-recrystallization (ZMR) of amorphous silicon (a-Si) strips induced by micro-thermal-plasma- jet (µ-TPJ) irradiation. The grain boundaries (GBs) in strip pattern were almost excluded and most of the strips consist of ∑3 coincidence site lattices (CSLs) or in some cases single grains. Strip pattern was quite effective even in the case of short channel TFTs. N- and p-channel TFTs with typical field effect mobility (µFE ) of 380 and 140 cm2/Vs, respectively, are successfully fabricated with significantly reduced characteristics variability. These high µFE and low variation of threshold voltage (Vth ) by strip pattern showed significantly stable output characteristics regardless of the size of TFTs.
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