Effect of grain boundary scattering on carrier mobility and thermoelectric properties of tellurium incorporated copper iodide thin films

Abstract

Copper iodide (CuI) is a promising p-type transparent semiconductor with many potential applications in range of fields such as transistors, optoelectronics, solar cells, thermal sensors, and energy harvesting. We report compositional, structural, optical, electrical, and thermoelectric properties of optically transparent tellurium (Te) incorporated CuI films, (CuI)1-xTex where x=0–0.09, prepared by ion beam sputtering. The films are composed of γ-CuI with the presence of elemental tellurium clusters in films prepared with high Te concentration sputtering targets. The carrier mobility decreased from 6.9 ± 0.9 cm2V-1s-1 to 0.7 ± 0.1 cm2V-1s-1, and the electrical conductivity from 84.22 ± 8.45 Scm-1 to 3.97 ± 0.40 Scm-1 for the CuI and (CuI)0.91Te0.09 films, respectively, attributed to a transition from polar optical phonon to grain boundary scattering. The change in the mobility-limiting scattering mechanism decreased the power factor from 454 ± 57 μWm-1K-2 for the CuI film to 34 ± 4 μWm-1K-2 for the (CuI)0.91Te0.09 film. Our study shows that modulating the scattering mechanism in transparent thermoelectric materials is a powerful method to tune their thermoelectric properties.