Abstract
A minority carrier diffusion length inhomogeneity induced by grain boundaries on indium tin oxide/CdS/InP and indium tin oxide/InP polycrystalline solar cells has been investigated. The open-circuit voltage method has been employed and scanning surface photovoltage measurements have been carried out. By illuminating selected areas of the devices with a light of low intensity whose energy was varied in a narrow spectral range above the energy band gap of InP, a decrease in the diffusion length corresponding to the grain boundary position was detected. An explanation of the limited conversion efficiency achieved in these solar cells has been partially ascribed to the presence of a high grain boundary interface states density within high angle grain boundaries.
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