Abstract
Chemical mechanical polishing (CMP) technology has been newly applied in printed circuit board (PCB) field for satisfying requirements from miniaturization of mobile devices. This paper focuses on the complexing agent to increase the removal rate for thick Cu layer. In order to find out optimum type and concentration of the complexing agent, experiments have been done in terms of electrochemical analysis, surface roughness and removal rate. As concentration of complexing agent (glycine) in slurry increased, it was confirmed that corrosion current density increased in potentio-dynamic curve since it promoted production of new Cu ion by decreasing amount of Cu ion of chemical reaction layer. Finally, it was possible to confirm that chemical reaction had a direct correlation with removal rate through CMP evaluation.
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