Effect of Glass Substrate on the Film Properties of Poly Silicon by Excimer Laser Annealing

Abstract

This work studies the effect of glass substrate thermal properties on the crystallization behavior and surface topography of polycrystalline silicon (p-Si) films formed by a XeCl excimer laser annealing of amorphous silicon. 60 nm hydrogenated amorphous silicon (a-Si:H) film was deposited on different glass substrates of varying thermal properties. A 300 nm SiO2 buffer layer was in between the glass and the silicon film. The silicon was crystallized by a XeCl excimer laser. The film properties of p-Si exhibit a small relationship with the glass substrate thermal properties. The higher thermal conductivity of glass retards the poly-Si <111> texture and reduced the residual tensile stress. The higher thermal diffusivity of the glass substrate causes a decline in the p-Si <111> texture, the surface asymmetry, and flatness.