Effect of germanium implantation on metal-oxide-semiconductor avalanche injection

Abstract

The effect of germanium on the hot electron current of a metal-oxide-semiconductor device has been studied by avalanche electron injection from the silicon to the silicon dioxide. Different doses of germanium ranging from 1012 to 1015 atoms/cm2 are implanted into the Si-SiO2 interface. The ‘‘lucky’’ hot electron population is suppressed by the germanium implantation. We have used the charge-voltage technique to measure the interface state density. The interface state density increase caused by the Ge implantation is negligible if the dose is lower than 1014 Ge/cm2. Our results show that the Ge implantation is a promising method to solve the hot carrier problem that has become important in submicrometer devices.