Abstract
Effect of Ge2Sb2Te5 (GST) material properties (different phase states) on its chemical mechanical polishing (CMP) process is studied. Amorphous, crystalline state (200°and 250° annealing) GST film on 8-inch oxide wafers are polished in the same polish condition (mechanical parameters and slurry). CMP result shows that material removal rate (MRR) of crystalline GST is much faster than MRR of amorphous GST. Besides, MRR of crystalline GST reduces while GST annealing temperature is increased. According to the previous result, GST material phase state and GST grain size effect on GST CMP process are discussed from chemical reaction and mechanical abrasion aspects.
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