Abstract
The relationships between the microstructure and the dielectric properties of sol-gel prepared Y₂O₃ films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1-xGdx)₂O₃ (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn-Sn-O/(Y, Gd)₂O₃ TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm²V-1s-1 and an exceptionally low operating voltage <15 V.
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