EFFECT OF Gd2O3 DOPING ON DIELECTRIC PROPERTIES OF Ba(Zr0.1Ti0.9)O3 CERAMICS

Abstract

Using BaCO3, TiO2, ZrO2 and Gd2O3 as the starting materials, the Ba(Zr0.1Ti0.9)O3 ceramics are prepared using solid state synthesis method, and effects of Gd2O3 dopant on microstructure and dielectric properties of Ba(Zr0.1Ti0.9)O3 ceramics are investigated. The results show that the crystal structure for Ba(Zr0.1Ti0.9)O3 ceramics is a single perovskite structure, and the doping of Gd3+ does not generate new phase. With the Gd2O3 concentration increasing, the grain size increases continuously, when the doping amount x ≥ 0.5 mol %, the grain size basically remains unchanged, the grain size is uniform. With the Gd2O3 content increasing, the dielectric constants rose first and then decreased under different sintering conditions of 1280 °C, 1300 °C, 1330 °C, and 1350 °C. When the sintering temperature is 1350 °C and the Gd3+ doping amount is x = 0.5 mol %, the dielectric loss is minimal, the dielectric constant is the highest, and the dielectric performance at room temperature is optimal. Gd2O3 doping has little effect on the movement of the Curie point of BZT ceramics, but the doping of Gd2O3 can increase the peak of the dielectric peak at the Curie point.